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Tsuda, Shuichi; Sato, Tatsuhiko; Takahashi, Fumiaki; Satoh, Daiki; Endo, Akira; Sasaki, Shinichi*; Namito, Yoshihito*; Iwase, Hiroshi*; Ban, Shuichi*; Takada, Masashi*
no journal, ,
Knowledge of energy deposition at micrometer dimensions along heavy ion tracks is essential to understand the biological effects of radiation. Wall-less tissue equivalent proportional counter (TEPC) was produced for the purpose of measurement of lineal energy distribution of delta-rays. The measurement using the TEPC was performed at Heavy Ion Medical Accelerator at NIRS, Japan. It is found that lineal energy distributions could be measured for primary carbon beam with energy of 400MeV per nucleon and delta-rays. Detail of the experiment, energy calibration and estimation of delta-rays production will be presented.
Hayashi, Yukio; Kando, Masaki; Kotaki, Hideyuki; Kawase, Keigo; Homma, Takayuki; Bulanov, S. V.
no journal, ,
The source, which can generate arbitrary mono-energetic X-ray, is used wide fields, e.g., X-ray crystallography and imaging. It is usual to generate this X-ray with the crystal spectroscope and the bremsstrahlung, which is produced by the electron irradiation to the target. There is the problem that the most of the bremsstrahlung is not used in this case. Parametric X-ray is generated by other mechanism. It was discovered by S.A.Vorobiev. As this X-ray follows Bragg condition, we can obtain arbitrary mono-energetic X-ray by changing the incidental angle of the electron source. If we can obtain the ultra short pulse parametric X-ray using the laser plasma electron, it will be useful source. In this time, we show the result of parametric X-ray generation by using the electron accelerator.
H(p,n)He reactionTanimura, Yoshihiko; Saegusa, Jun; Shikaze, Yoshiaki; Tsutsumi, Masahiro; Yoshizawa, Michio
no journal, ,
no abstracts in English
-FeSi
films by synchrotron radiation fabricated with ion beam sputter depositionEsaka, Fumitaka; Yamamoto, Hiroyuki; Matsubayashi, Nobuyuki*; Yamada, Yoichi*; Sasase, Masato*; Magara, Masaaki; Kimura, Takaumi; Yamaguchi, Kenji; Shamoto, Shinichi
no journal, ,
Synchrotron radiation excited XPS and XAS were utilized to investigate chemical states of the surface of -FeSi films fabricated by ion beam sputter deposition. The analysis was performed at the BL-13C of the Photon Factory in KEK. In the XPS analysis, depth profiling was carried out by changing the kinetic energy of photoelectrons. As a result, the relative ratios of SiO and SiO
increased with decreasing the kinetic energy of photoelectrons. Simulation results indicated that the SiO formed at the upper layer and the SiO formed at the lower layer of the surface. These results show that these analytical methods enable us to investigate chemical states of solid surfaces in detail.
Sato, Shinichiro; Sai, Hitoshi*; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Kondo, Michio*; Oshima, Takeshi
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no abstracts in English
Yamauchi, Toshihiko; Takemoto, Ryo*; Yabuno, Masahiro*; Kanno, Yoshinori*; Kobayashi, Seiji*; Shiramizu, Miho*; Takei, Toru*; Kato, Hatsuhiro*; Nakagaki, Keita*
no journal, ,
no abstracts in English
/SiC interfaces formed by thermal oxidation of plasma nitrided SiC surfacesKagei, Yusuke*; Kosono, Kohei*; Kutsuki, Katsuhiro*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
no journal, ,
Impact of high-density plasma nitridation of 4H-SiC(0001) surface on thermally grown SiO/SiC interface structure was investigated using synchrotron radiation X-ray photoemission spectroscopy. Surface nitridation was confirmed from Si2p and N1s spectra. Both Si sub-oxide and Si sub-nitride states at SiO/SiC interface was evaluated through deconvolution of Si2p spectra. We found that the amount of Si sub-oxide states increased with the oxidation time. However, the formation of Si sub-oxides was effectively suppressed by the surface nitridation treatment prior to oxidation. Since an interface state density of Al/SiO/SiC MOS capacitor was approximately halved by the surface nitridation treatment, a generation of interface defects was considered to be caused by the Si sub-oxides formation.
Oshima, Takeshi; Onoda, Shinobu; Hotta, Kazutoshi*; Kamada, Toru*; Kawata, Kenji*; Eryu, Osamu*
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no abstracts in English
Tanaka, Yayoi*; Hotta, Kazutoshi*; Kamada, Toru*; Kawata, Kenji*; Oshima, Takeshi; Eryu, Osamu*
no journal, ,
no abstracts in English
Hotta, Kazutoshi*; Kamada, Toru*; Kawata, Kenji*; Eryu, Osamu*; Oshima, Takeshi
no journal, ,
no abstracts in English
Kato, Masashi*; Fukushima, Keisuke*; Kasuga, Masanobu*; Kito, Kosuke*; Ichimura, Masaya*; Kanechika, Masakazu*; Ishiguro, Osamu*; Kachi, Tetsu*; Oshima, Takeshi
no journal, ,
no abstracts in English
molecular beamSowa, Makoto*; Okada, Michio*; Yoshigoe, Akitaka; Teraoka, Yuden; Kasai, Toshio*
no journal, ,
Oxidation reactions of a TiNi alloy have been studied at BL23SU of JAEA in the SPring-8 using supersonic oxygen molecular beams and photoemission spectroscopy with synchrotron radiation. A clean TiNi surface was obtained by an Ar ion sputtering method. The surface was exposed to oxygen gas to form a TiO surface with a small amount of Ti
component. This fact suggests many defects are included in the oxide layer. On the other hand, a pure TiO layer was formed by using supersonic oxygen molecular beams with the kinetic energy of 2 eV. The thickness was about 2 nm. Furthermore, the molecular beam irradiation during sample heating at 673 K gave a pure TiO layer with the thickness of 80 nm.
Abe, Hiroshi; Aone, Shigeo*; Uchida, Hirohisa*; Oshima, Takeshi
no journal, ,
no abstracts in English
in oxygen adsorption process on Si(111)-7
7 surface at room temperatureYoshigoe, Akitaka; Teraoka, Yuden
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no abstracts in English
Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
no abstracts in English
-ray irradiation effects on the I-V characteristics of 4H-SiC MESFETOnoda, Shinobu; Iwamoto, Naoya; Ono, Shuichi*; Katakami, Shuji*; Arai, Manabu*; Kawano, Katsuyasu*; Oshima, Takeshi
no journal, ,
no abstracts in English
/Si interfacial oxidation, 1; Behavior of doped carbon atomHozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*
no journal, ,
The oxidation reaction of Si
C
alloy layer which was formed with CH
exposure on a p-type Si(001) surface is observed by real-time photoemission spectroscopy to investigate the role of lattice strain. Experiments were performed using the surface reaction analysis apparatus placed at the BL23SU of SPring-8. Oxidation rate on the SiC alloy layer was larger than that on a clean surface at interface oxidation. The number of carbon atom was constant for surface oxidation and reduced for interface oxidation suggesting that carbon atoms did not exist in the SiO layer and diffused into an Si substrate without CO or CO desorption during oxidation. Then, there was good correlation between the oxidation rate and the number of carbon atom. These results could be explained with the unified Si oxidation reaction model mediated by point defect generation.
/SiC interface atomic structure generated with first-principles molecular dynamics simulationMiyashita, Atsumi; Onuma, Toshiharu*; Iwasawa, Misako*; Tsuchida, Hidekazu*; Yoshikawa, Masahito
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no abstracts in English
/4H-SiC C-face oxidation process; Effect of temperatureOnuma, Toshiharu*; Miyashita, Atsumi; Iwasawa, Misako*; Yoshikawa, Masahito; Tsuchida, Hidekazu*
no journal, ,
no abstracts in English